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MD120HFR120C2S
Silicon Carbide MOSFET, Silicon Carbide, Half Bridge, Dual N Channel, 200 A, 1.2 kV, 0.01 ohm
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可供訂購
製造商標準交貨時間：24 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$14,817.740 |
| 5+ | NT$14,483.700 |
價格Each
最少: 1
多項: 1
NT$14,817.74
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商STARPOWER
製造商產品編號MD120HFR120C2S复制
製造商標準前置時間24 週
訂購代碼2986055
技術資料表
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id200A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.01ohm
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation-
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
產品總覽
Starpower IGBT Modules and Arrays provide ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. With key features of Trench IGBT technology, maximum junction temperature 175°C and an Isolated copper baseplate using DBC technology.
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
200A
Drain Source On State Resistance
0.01ohm
No. of Pins
-
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
150°C
SVHC
To Be Advised
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
18V
Power Dissipation
-
Product Range
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:To Be Advised
下載產品合規憑證
產品合規憑證
重量 (公斤)：.294835