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BUL128D-B
Bipolar (BJT) Single Transistor, NPN, 400 V, 4 A, 70 W, TO-220, Through Hole
不再生產
產品總覽
The BUL128D-B is a NPN fast-switching Power Transistor manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications switch-mode power supplies.
- Low spread of dynamic parameters
- Minimum lot-to-lot spread for reliable operation
- Very high switching speed
- Integrated anti-parallel collector- emitter diode
應用
Industrial, Power Management, Lighting, Signal Processing
技術規格
Transistor Polarity
NPN
Continuous Collector Current
4A
Transistor Case Style
TO-220
Transition Frequency
-
Product Range
-
Collector Emitter Voltage Max
400V
Power Dissipation
70W
Transistor Mounting
Through Hole
Operating Temperature Max
150°C
Qualification
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.002