EVSTGAP2GS

EVSTGAP2GS is a half bridge evaluation board to evaluate STGAP2GS galvanically isolated single gate driver with e-mode GaN transistor. The gate driver is characterized by 2A source and 3A sink capability and rail-to-rail O/P, making device suitable for mid and high power inverter applications such as power conversion and motor driver inverters in industrial applications. The device allows to independently optimize turn-on and turn-off by using dedicated gate resistors. The device integrates protection functions including thermal shutdown and UVLO with optimized level for enhancement-mode GaN transistors, which enables easy design high efficiency and reliable systems. Dual input pins allow the selection of signal polarity control and implementation of HW interlocking protection to avoid cross-conduction in case of controller malfunction. The board components are easy to access and modify in order to make driver performance evaluation easier under different application conditions.

• Half bridge configuration, high voltage rail up to 650V
• SGT120R65AL: 650V, 75mohm typ, 15A, e-mode PowerGaN transistor
• Negative gate driving
• On-board DC-DC converter to supply high-side and low-side gate drivers by 5V VAUX, 5.2kV isolation
• VDD logic supplied by on-board 3.3V or VAUX = 5V
• Easy jumper selection of driving voltage configuration: +6/0V, +6/-3V