IRF630

The IRF630 from STMicroelectronics is a through hole, 200V N channel mesh overlay II power MOSFET in TO-220 package. This power MOSFET is designed using the company’s consolidated strip layout based MESH OVERLAY process which matches and improves the performances. Features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized.

• Drain to source voltage (Vds) is 200V
• Gate to source voltage of ±20V
• Continuous drain current (Id) is 9A
• Power dissipation (Pd) is 75W
• Operating junction temperature range from -65°C to 150°C
• Gate threshold voltage of 3V
• Low on state resistance of 350mohm at Vgs 10V

應用

Power Management, Consumer Electronics, Portable Devices, Industrial

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.