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| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$186.410 | NT$186.41 |
| 總計 價格 | NT$186.41 | ||
| 數量 | 價格 |
|---|---|
| 1+ | NT$186.410 |
| 10+ | NT$144.240 |
| 25+ | NT$142.740 |
| 50+ | NT$142.090 |
產品訊息
產品總覽
MASTERGAN4LTR is a 600V half-bridge enhancement-mode GaN HEMT with a high-voltage driver. It is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in a half‑bridge configuration. It features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with analogue controllers, microcontrollers, and DSP units. Typical applications are high-frequency resonant converters including LLC, LCC and resonant flyback, active clamp flybacks, switch-mode power supplies, chargers and adapters, PFC, high-voltage DC-DC and DC-AC converters.
- Reverse current capability, zero reverse recovery loss
- UVLO protection on VCC, internal bootstrap diode
- Interlocking function, dedicated pin for shutdown functionality
- Accurate internal timing match
- 3.3V to 15V compatible inputs with hysteresis and pull-down
- Overtemperature protection, bill of material reduction
- Very compact and simplified layout, flexible, easy, and fast design
- QFN package
- Industrial temperature range from -40°C to 125°C
- Output capacitance is 14.2pF (VGS = 0V, VDS = 400V)
技術規格
1Channels
Half Bridge
31Pins
Surface Mount
-
4.75V
-40°C
-
-
No SVHC (25-Jun-2025)
-
GaN HEMT
QFN-EP
Non-Inverting
-
9.5V
125°C
-
-
法規與環境保護
承擔產品生產最後程序之國家原產地:Thailand
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證
