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PD57006-E
RF FET Transistor, 65 V, 1 A, 20 W, 925 MHz, 960 MHz, PowerSO-10RF
不再生產
產品總覽
The PD57006-E is a N-channel RF Power Transistor designed for high gain, broad band applications. It operates at 28V in common source mode at frequencies of up to 1GHz. It boasts excellent gain, linearity and reliability thanks to ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for car mobile radios. It has been optimized for RF requirements and offers excellent RF performance and ease of assembly.
- Excellent thermal stability
- Common source configuration
- Enhancement-mode lateral field-effect transistor
應用
Industrial, Commercial, Power Management
技術規格
Drain Source Voltage Vds
65V
Power Dissipation
20W
Operating Temperature Max
165°C
Transistor Mounting
Surface Mount
Continuous Drain Current Id
1A
Transistor Case Style
PowerSO-10RF
Channel Type
N Channel
Product Range
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.003