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STB100NF04T4
Power MOSFET, N Channel, 40 V, 120 A, 4300 µohm, TO-263 (D2PAK), Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$121.910 |
| 10+ | NT$108.250 |
| 100+ | NT$94.580 |
| 500+ | NT$80.910 |
| 1000+ | NT$67.240 |
價格Each
最少: 1
多項: 1
NT$121.91
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STB100NF04T4复制
製造商標準前置時間16 週
訂購代碼2341725
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id120A
Drain Source On State Resistance4300µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STB100NF04T4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique STripFET process. It is specifically designed to minimize input capacitance and gate charge. The device is suitable for use as primary switch in advanced high-efficiency isolated DC-to-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
- Standard threshold drive
- 100% Avalanche tested
- -55 to 175°C Operating junction temperature range
應用
Power Management, Computers & Computer Peripherals, Communications & Networking, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
4300µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
-
STB100NF04T4 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.0001