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STB60NF06LT4
Power MOSFET, N Channel, 60 V, 60 A, 0.014 ohm, TO-263 (D2PAK), Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$100.360 |
| 10+ | NT$64.930 |
| 50+ | NT$45.050 |
| 200+ | NT$40.580 |
| 500+ | NT$36.110 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$100.36
品項附註
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產品訊息
製造商產品編號STB60NF06LT4复制
製造商標準前置時間19 週
訂購代碼1175644
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id60A
Drain Source On State Resistance0.014ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max1V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCLead (21-Jan-2025)
產品總覽
The STB60NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Low threshold drive
- -55 to 175°C Operating junction temperature range
應用
Automotive, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
60A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
5V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.014ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
STB60NF06LT4 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
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產品合規憑證
重量 (公斤)：.002