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STD10NM60N
Power MOSFET, N Channel, 600 V, 10 A, 0.53 ohm, TO-252 (DPAK), Surface Mount
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3435 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$47.420 |
| 10+ | NT$46.760 |
| 100+ | NT$46.120 |
| 500+ | NT$45.790 |
| 1000+ | NT$43.180 |
| 5000+ | NT$41.530 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$47.42
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STD10NM60N
訂購代碼2098151
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id10A
Drain Source On State Resistance0.53ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation70W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STD10NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET is developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest ON-resistance. It is therefore suitable for the most demanding high efficiency converters.
- 100% Avalanche tested
- Low gate input resistance
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
10A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
70W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.53ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
STD10NM60N 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000445