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STD4NK60ZT4
Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-252 (DPAK), Surface Mount
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1195 件可于 1-2 個工作日後配送(新加坡 件庫存)
3126 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$17.140 |
| 10+ | NT$15.550 |
| 100+ | NT$13.490 |
| 500+ | NT$11.900 |
| 1000+ | NT$10.080 |
| 5000+ | NT$9.710 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$17.14
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STD4NK60ZT4
訂購代碼1291961
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id4A
Drain Source On State Resistance2ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Power Dissipation70W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STD4NK60ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
- Very low intrinsic capacitance
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
4A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
70W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
2ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00031