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STD9N65M2
Power MOSFET, N Channel, 650 V, 5 A, 0.79 ohm, TO-252 (DPAK), Surface Mount
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包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$64.560 | NT$64.56 |
| 總計 價格 | NT$64.56 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$64.560 |
| 10+ | NT$41.480 |
| 100+ | NT$27.980 |
| 500+ | NT$22.280 |
| 1000+ | NT$19.690 |
| 5000+ | NT$19.640 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STD9N65M2
訂購代碼
複捲式2460392RL
條帶式包裝2460392
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id5A
Drain Source On State Resistance0.79ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STD9N65M2 is a MDmesh M2 N-channel Power MOSFET offers Zener-protection and extremely low gate charge. This Power MOSFET is developed using the MDmesh™ M2 technology which has strip layout associated to an improved vertical structure, the device exhibits both low ON-resistance and optimized switching characteristics. Therefore it is suitable for the most demanding high efficiency converters.
- Excellent output capacitance (COSS) profile
- 100% Avalanche tested
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
5A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
60W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.79ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
STD9N65M2 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00033