列印頁面
圖片僅供舉例說明。 請參閱產品描述。

56 有存貨
需要更多?
56 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$104.450 |
| 10+ | NT$66.940 |
| 100+ | NT$57.890 |
| 500+ | NT$49.800 |
| 1000+ | NT$47.860 |
| 5000+ | NT$47.220 |
價格Each
最少: 1
多項: 1
NT$104.45
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STF11NM50N复制
製造商標準前置時間17 週
訂購代碼2098199
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id8.5A
Drain Source On State Resistance0.4ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STF11NM50N is a MDmesh™ II N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure strip layout to yields lowest ON-resistance and gate charge. It is suitable for the most demanding high efficiency converters.
- 100% Avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
8.5A
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Power Dissipation
25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.4ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 6 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.19
