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The STGB10NC60KDT4 is a short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behaviour. It is suitable for SMPS and PFC in both hard switch and resonant topologies.
- Low on-voltage drop (VCE(sat))
- Low CRES/CIES ratio (no cross-conduction susceptibility)
- Very soft ultrafast recovery anti-parallel diode
- 10µs Short-circuit withstand time
應用
Motor Drive & Control, Power Management
技術規格
Continuous Collector Current
10A
Power Dissipation
60W
Transistor Case Style
TO-263 (D2PAK)
Transistor Mounting
Surface Mount
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage Max
600V
Operating Temperature Max
150°C
Product Range
-
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85413000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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重量 (公斤):.00138