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STGD18N40LZT4
IGBT, 25 A, 1.35 V, 125 W, 390 V, TO-252 (DPAK), 3 Pins
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1785 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$50.360 |
| 10+ | NT$38.590 |
| 100+ | NT$37.050 |
| 500+ | NT$35.500 |
| 1000+ | NT$33.950 |
價格Each
最少: 1
多項: 1
NT$50.36
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STGD18N40LZT4
訂購代碼2344078
技術資料表
Continuous Collector Current25A
Collector Emitter Saturation Voltage1.35V
Power Dissipation125W
Collector Emitter Voltage Max390V
Transistor Case StyleTO-252 (DPAK)
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingSurface Mount
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STGD18N40LZT4 is an internally clamped IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diode between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low ON-state voltage drop and low threshold drive for use in automotive ignition system. It is suitable for pencil coil electronic ignition drive.
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor
- 180mJ Avalanche energy @ TC = 150°C, L = 3mH
應用
Automotive, Power Management
技術規格
Continuous Collector Current
25A
Power Dissipation
125W
Transistor Case Style
TO-252 (DPAK)
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Collector Emitter Saturation Voltage
1.35V
Collector Emitter Voltage Max
390V
No. of Pins
3Pins
Transistor Mounting
Surface Mount
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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重量 (公斤)：.000533