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The STGE50NC60VD is a very fast IGBT using the latest high voltage technology based on a patented strip layout. STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT with outstanding performances. The suffix V identifies a family optimized for high frequency. It is suitable for high frequency inverters, SMPS and PFC in both hard switching and resonant topologies.
- High current capability
- High frequency operation
- Low CRES/CIES ratio (no cross-conduction susceptibility)
- Very soft ultra fast recovery anti-parallel diode
應用
Power Management, Motor Drive & Control
技術規格
Continuous Collector Current
90A
Power Dissipation
260W
Transistor Case Style
ISOTOP
Transistor Mounting
Surface Mount
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage Max
600V
Operating Temperature Max
150°C
Product Range
-
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原產地:
承擔產品生產最後程序之國家原產地:Morocco
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Morocco
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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重量 (公斤):.00004