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製造商標準交貨時間:18 週
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| 數量 | 價格 |
|---|---|
| 1+ | NT$86.660 |
| 10+ | NT$41.530 |
| 100+ | NT$37.940 |
| 500+ | NT$30.780 |
| 1000+ | NT$29.460 |
| 5000+ | NT$28.140 |
價格Each
最少: 1
多項: 1
NT$86.66
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STGP20V60DF
訂購代碼3366985
技術資料表
Continuous Collector Current40A
Collector Emitter Saturation Voltage1.8V
Power Dissipation167W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
SVHCNo SVHC (25-Jun-2025)
產品總覽
STGP20V60DF is a high speed trench gate field-stop IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Typical applications include photovoltaic inverters, uninterruptible power supply, welding, power factor correction and very high frequency converters.
- Very high speed switching series
- Tail-less switching off
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Operating junction temperature range from -55 to 175°C
- TO-220 package
- 600V collector-emitter voltage (VGE = 0)
- 167W total dissipation at TC = 25°C
技術規格
Continuous Collector Current
40A
Power Dissipation
167W
Transistor Case Style
TO-220
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.0019