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STGW40M120DF3
IGBT Single Transistor, 80 A, 1.85 V, 468 W, 1.2 kV, TO-247, 3 Pins
產品總覽
The STGW40M120DF3 is a Trench gate field-stop IGBT developed using an advanced proprietary Trench gate field-stop structure. The device is part of the M series of IGBT, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and fast recovery anti-parallel diode
- 10µs Short-circuit withstand time
應用
Industrial, Power Management, Alternative Energy, Maintenance & Repair
產品訊息
技術文件 (2)
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