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STGW40M120DF3
IGBT, 80 A, 1.85 V, 468 W, 1.2 kV, TO-247, 3 Pins
可供訂購
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| 數量 | 價格 |
|---|---|
| 1+ | NT$208.300 |
| 10+ | NT$119.030 |
| 100+ | NT$115.500 |
| 500+ | NT$111.960 |
| 1000+ | NT$108.420 |
價格Each
最少: 1
多項: 1
NT$208.30
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STGW40M120DF3
訂購代碼2470028
技術資料表
Continuous Collector Current80A
Collector Emitter Saturation Voltage1.85V
Power Dissipation468W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STGW40M120DF3 is a Trench gate field-stop IGBT developed using an advanced proprietary Trench gate field-stop structure. The device is part of the M series of IGBT, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and fast recovery anti-parallel diode
- 10µs Short-circuit withstand time
應用
Industrial, Power Management, Alternative Energy, Maintenance & Repair
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Continuous Collector Current
80A
Power Dissipation
468W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Collector Emitter Saturation Voltage
1.85V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.002