列印頁面
1,157 有存貨
需要更多?
1157 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$132.320 |
| 10+ | NT$67.940 |
| 100+ | NT$61.820 |
| 500+ | NT$57.630 |
| 1000+ | NT$51.200 |
| 5000+ | NT$50.180 |
價格Each
最少: 1
多項: 1
NT$132.32
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP10NK60ZFP
訂購代碼9935517
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id10A
Drain Source On State Resistance0.75ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation35W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this MOSFET is designed to ensure a high level of dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- Extremely high dv/dt capability
- 100% Avalanche tested
- Gate charge minimized
- Zener-protected
應用
Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
10A
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Power Dissipation
35W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.75ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
STP10NK60ZFP 的替代選擇
找到 4 個產品
相關產品
找到 3 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.002

