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STP12NM50
MOSFET, N, TO-220
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| 數量 | 價格 |
|---|---|
| 1+ | NT$60.970 |
| 10+ | NT$59.760 |
| 100+ | NT$58.540 |
| 500+ | NT$57.320 |
| 1000+ | NT$56.100 |
價格Each
最少: 1
多項: 1
NT$60.97
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP12NM50
訂購代碼1291980
Product RangeSTP
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds550V
Continuous Drain Current Id12A
Drain Source On State Resistance0.35ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation160W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSTP
Qualification-
MSL-
SVHCLead (21-Jan-2025)
產品總覽
The STP12NM50 is a 500V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing proprietary strip technique, MOSFET boasts an overall dynamic performance which is superior. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- 100% Avalanche tested
- Low gate input resistance
- Tight process control and high manufacturing yields
應用
Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
160W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
550V
Drain Source On State Resistance
0.35ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
STP
MSL
-
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Morocco
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Morocco
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
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產品合規憑證
重量 (公斤)：.009072