列印頁面
STP20NM50
Power MOSFET, N Channel, 550 V, 20 A, 0.25 ohm, TO-220, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
3,228 有存貨
需要更多？
3228 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$193.100 |
| 10+ | NT$89.670 |
| 100+ | NT$88.710 |
| 500+ | NT$86.470 |
| 1000+ | NT$84.870 |
價格Each
最少: 1
多項: 1
NT$193.10
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP20NM50
訂購代碼1653679
Product RangeSTP
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds550V
Continuous Drain Current Id20A
Drain Source On State Resistance0.25ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation192W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSTP
Qualification-
MSL-
SVHCLead (21-Jan-2025)
產品總覽
The STP20NM50 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics and dynamic performances.
- High dV/dt and avalanche capabilities
- 100% Avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- -65 to 150°C Operating junction temperature range
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
192W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
550V
Drain Source On State Resistance
0.25ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
STP
MSL
-
相關產品
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Morocco
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Morocco
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002041