列印頁面
STP20NM60
Power MOSFET, N Channel, 600 V, 20 A, 0.29 ohm, TO-220, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
可供訂購
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$223.260 |
| 10+ | NT$119.250 |
| 100+ | NT$109.320 |
| 500+ | NT$105.010 |
| 1000+ | NT$103.360 |
價格Each
最少: 1
多項: 1
NT$223.26
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP20NM60复制
製造商標準前置時間16 週
訂購代碼2344098
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id20A
Drain Source On State Resistance0.29ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage30V
Gate Source Threshold Voltage Max4V
Power Dissipation192W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STP20NM60 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company's PowerMESH™ horizontal layout. The resulting product has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
- High dV/dt and avalanche capabilities
- Low gate input resistance
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
TO-220
Rds(on) Test Voltage
30V
Power Dissipation
192W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.29ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
STP20NM60 的替代選擇
找到 3 個產品
相關產品
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002765