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STP3N150
Power MOSFET, N Channel, 1.5 kV, 2.5 A, 9 ohm, TO-220, Through Hole
525 有存貨
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525 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$210.680 |
| 10+ | NT$111.310 |
| 100+ | NT$101.700 |
| 500+ | NT$91.430 |
| 1000+ | NT$81.170 |
價格Each
最少: 1
多項: 1
NT$210.68
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP3N150复制
訂購代碼1456344
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds1.5kV
Continuous Drain Current Id2.5A
Drain Source On State Resistance9ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STP3N150 is a PowerMESH™ N-channel Power MOSFET features minimized intrinsic capacitances and Qg. This Power MOSFET designed using the company's consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
- 100% Avalanche tested
- High speed switching
- Creepage distance path is 5.4mm
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
2.5A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
1.5kV
Drain Source On State Resistance
9ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.00204