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STP3NK90Z
Power MOSFET, N Channel, 900 V, 3 A, 4.1 ohm, TO-220, Through Hole
612 有存貨
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612 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$92.740 |
| 10+ | NT$46.050 |
| 100+ | NT$41.450 |
| 500+ | NT$33.560 |
| 1000+ | NT$33.220 |
| 5000+ | NT$32.430 |
價格Each
最少: 1
多項: 1
NT$92.74
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP3NK90Z
訂購代碼9803122
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id3A
Drain Source On State Resistance4.1ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation90W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
產品總覽
The STP3NK90Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
- 100% Avalanche tested
- Very low intrinsic capacitance
- Extremely high dV/dt capability
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
3A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
90W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
900V
Drain Source On State Resistance
4.1ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
STP3NK90Z 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002