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STP4NK60Z
Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220, Through Hole
78 有存貨
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78 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$89.440 |
| 10+ | NT$51.350 |
| 100+ | NT$38.430 |
| 500+ | NT$30.650 |
| 1000+ | NT$26.710 |
| 5000+ | NT$26.180 |
價格Each
最少: 1
多項: 1
NT$89.44
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP4NK60Z复制
訂購代碼9803203
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id4A
Drain Source On State Resistance2ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation70W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STP4NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
- 100% Avalanche tested
- Very low intrinsic capacitance
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
4A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
70W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
STP4NK60Z 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Morocco
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Morocco
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002