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STP4NK60ZFP
Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220FP, Through Hole
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1413 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$72.140 |
| 10+ | NT$30.320 |
| 100+ | NT$30.160 |
| 500+ | NT$25.900 |
| 1000+ | NT$24.930 |
| 5000+ | NT$24.440 |
價格Each
最少: 1
多項: 1
NT$72.14
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP4NK60ZFP
訂購代碼1291985
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id4A
Drain Source On State Resistance2ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STP4NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- 100% Avalanche tested
- Very low intrinsic capacitance
- Zener-protected
應用
Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
4A
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Power Dissipation
25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.004445