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| 數量 | 價格 |
|---|---|
| 1+ | NT$82.260 |
| 10+ | NT$40.650 |
| 100+ | NT$36.460 |
| 500+ | NT$29.170 |
| 1000+ | NT$25.450 |
| 5000+ | NT$23.680 |
價格Each
最少: 1
多項: 1
NT$82.26
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP60NF06L
訂購代碼9935657
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id60A
Drain Source On State Resistance0.014ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STP60NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique sTripFET process which minimizes input capacitance and gate charge hence suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application and intended for any application with low gate charge drive.
- Exceptional dv/dt capability
- Avalanche tested
- Drain to source voltage (Vds) of 60V
- Gate to source voltage of ±15V
- Continuous drain current (Id) of 60A
- Power dissipation (Pd) of 110W
- Low on state resistance of 12mohm at Vgs 10V
- Operating junction temperature range from -65°C to 175°C
應用
Power Management, Consumer Electronics, Portable Devices, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
60A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.014ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
STP60NF06L 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Morocco
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Morocco
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.002