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STP62NS04Z
Power MOSFET, N Channel, 33 V, 62 A, 0.0125 ohm, TO-220, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
可供訂購
製造商標準交貨時間：40 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$46.540 |
| 10+ | NT$27.830 |
| 100+ | NT$24.320 |
| 500+ | NT$20.510 |
| 1000+ | NT$18.440 |
| 5000+ | NT$17.740 |
價格Each
最少: 1
多項: 1
NT$46.54
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP62NS04Z复制
製造商標準前置時間40 週
訂購代碼9512594
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds33V
Continuous Drain Current Id62A
Drain Source On State Resistance0.0125ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
產品總覽
The STP62NS04Z is a N-channel clamped fully protected Power MOSFET produced by using most advanced MESH OVERLAY™ process based on strip layout. The inherent benefits of this new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operating conditions such as those encountered in the automotive environment. It is also recommended for any other application requiring extra ruggedness.
- 100% Avalanche tested
- Low capacitance and gate charge
- 175°C Maximum junction temperature
應用
Automotive, Power Management, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
62A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
33V
Drain Source On State Resistance
0.0125ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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產品合規憑證
重量 (公斤)：.008165