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STP7NK80Z
Power MOSFET, N Channel, 800 V, 5.2 A, 1.8 ohm, TO-220, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$129.350 |
| 10+ | NT$70.250 |
| 100+ | NT$61.470 |
| 500+ | NT$52.020 |
| 1000+ | NT$48.640 |
| 5000+ | NT$47.670 |
價格Each
最少: 1
多項: 1
NT$129.35
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP7NK80Z复制
製造商標準前置時間16 週
訂購代碼9803319
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id5.2A
Drain Source On State Resistance1.8ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STP7NK80Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
- 100% Avalanche tested
- Very low intrinsic capacitance
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
5.2A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
1.8ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.002