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STS10DN3LH5
Dual MOSFET, N Channel, 30 V, 30 V, 10 A, 10 A, 0.019 ohm
10,709 有存貨
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264 件可于 1-2 個工作日後配送(新加坡 件庫存)
10445 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$21.280 |
| 10+ | NT$19.150 |
| 100+ | NT$18.010 |
| 500+ | NT$16.730 |
| 1000+ | NT$15.600 |
| 5000+ | NT$15.300 |
價格Each
最少: 1
多項: 1
NT$21.28
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STS10DN3LH5
訂購代碼2807225
Product RangeSTripFET V Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel10A
Continuous Drain Current Id P Channel10A
Drain Source On State Resistance N Channel0.019ohm
Drain Source On State Resistance P Channel0.019ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.5W
Power Dissipation P Channel2.5W
Operating Temperature Max150°C
Product RangeSTripFET V Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
10A
Drain Source On State Resistance P Channel
0.019ohm
No. of Pins
8Pins
Power Dissipation P Channel
2.5W
Product Range
STripFET V Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
10A
Drain Source On State Resistance N Channel
0.019ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000122