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STS14N3LLH5
Power MOSFET, N Channel, 30 V, 7 A, 5000 µohm, SOIC, Surface Mount
不再生產
產品訊息
製造商產品編號STS14N3LLH5复制
訂購代碼1752181
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id7A
Drain Source On State Resistance5000µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation2.7W
Operating Temperature Max150°C
Product Range-
Qualification-
STS14N3LLH5 的替代選擇
找到 4 個產品
產品總覽
The STS14N3LLH5 is a N-channel Power MOSFET utilizes the 5th generation of design rules of STripFET™ V technology. The lowest available RDS (ON)*Qg, in SO-8 package, makes this device suitable for the most demanding DC-to-DC converter applications, where high power density is to be achieved.
- RDS (ON) x Qg industry benchmark
- Extremely low ON-resistance RDS (ON)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
- -55 to 150°C Operating junction temperature range
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
7A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.7W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
30V
Drain Source On State Resistance
5000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Operating Temperature Max
150°C
Qualification
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0002