列印頁面
STS5P3LLH6
Power MOSFET, P Channel, 30 V, 5 A, 0.048 ohm, SOIC, Surface Mount
不再生產
產品訊息
製造商產品編號STS5P3LLH6复制
訂購代碼3132764
Product RangeSTripFET H6 DeepGATE
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5A
Drain Source On State Resistance0.048ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation2.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeSTripFET H6 DeepGATE
Qualification-
SVHCNo SVHC (25-Jun-2025)
技術規格
Channel Type
P Channel
Continuous Drain Current Id
5A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.048ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
STripFET H6 DeepGATE
MSL
MSL 3 - 168 hours
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00035