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399 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$221.230 |
| 10+ | NT$152.300 |
| 100+ | NT$146.400 |
| 500+ | NT$143.480 |
| 1000+ | NT$140.550 |
價格Each
最少: 1
多項: 1
NT$221.23
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STW20NM50FD
訂購代碼9936017
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id20A
Drain Source On State Resistance0.25ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation214W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
產品總覽
The STW20NM50FD is a 500V N-channel FDmesh™ Power MOSFET with fast diode. The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase shift converters. The MOSFET is ideal for ZVS phase-shift full bridge converters for SMPS and welding equipment.
- Typical RDS (on)
- High dv/dt and avalanche capabilities
- 100% Avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Tight process control and high manufacturing yields
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
214W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.25ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
STW20NM50FD 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.009525

