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STW3N150
Power MOSFET, N Channel, 1.5 kV, 1.3 A, 6 ohm, TO-247, Through Hole
23 有存貨
600 即日起您可預購補貨
14 件可于 1-2 個工作日後配送(新加坡 件庫存)
9 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$172.320 |
| 10+ | NT$151.450 |
| 100+ | NT$130.580 |
| 500+ | NT$109.710 |
| 1000+ | NT$88.840 |
價格Each
最少: 1
多項: 1
NT$172.32
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STW3N150
訂購代碼1752211
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds1.5kV
Continuous Drain Current Id1.3A
Drain Source On State Resistance6ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
STW3N150 is a N-channel, 1500V, 2.5A, 6ohm typ, PowerMESH Power MOSFET in TO247 package. It is designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
- 140W total power dissipation
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Operating junction temperature of 150°C
- Suited for switching applications
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
1.3A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
1.5kV
Drain Source On State Resistance
6ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.006674