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STW45N65M5
Power MOSFET, N Channel, 650 V, 35 A, 0.067 ohm, TO-247, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$270.470 |
| 5+ | NT$249.910 |
| 10+ | NT$229.350 |
| 50+ | NT$208.790 |
| 100+ | NT$188.230 |
| 250+ | NT$167.670 |
價格Each
最少: 1
多項: 1
NT$270.47
品項附註
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產品訊息
製造商產品編號STW45N65M5
訂購代碼2784047
Product RangeMDmesh V
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id35A
Drain Source On State Resistance0.067ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation210W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh V
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
- 650V, 35A N-channel MDmesh™ V power MOSFET in 3 pin TO-247 package
- Worldwide best RDS(on) area
- Higher VDSS rating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
- Suitable for switching applications
- Based on innovative proprietary vertical process technology, PowerMESH™ horizontal layout structure
- Suitable for applications which require superior power density and outstanding efficiency
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
35A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
210W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.067ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
MDmesh V
MSL
MSL 1 - Unlimited
STW45N65M5 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.006735