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STW56N60M2-4
Power MOSFET, N Channel, 600 V, 52 A, 0.045 ohm, TO-247, Through Hole
180 有存貨
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180 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$331.110 |
| 5+ | NT$255.130 |
| 10+ | NT$179.140 |
| 50+ | NT$172.350 |
| 100+ | NT$165.560 |
| 250+ | NT$162.250 |
價格Each
最少: 1
多項: 1
NT$331.11
品項附註
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產品訊息
製造商產品編號STW56N60M2-4复制
製造商標準前置時間19 週
訂購代碼3132769
Product RangeMDmesh M2
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id52A
Drain Source On State Resistance0.045ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation350W
No. of Pins4Pins
Operating Temperature Max150°C
Product RangeMDmesh M2
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
STW56N60M2-4 is a N-channel, 600V, 45mohm typ, 52A MDmesh M2 Power MOSFET in a TO247-4 package. This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected
- Excellent switching performance thanks to the extra driving source pin
- Operating junction temperature of 150°C
技術規格
Channel Type
N Channel
Continuous Drain Current Id
52A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
350W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.045ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
4Pins
Product Range
MDmesh M2
SVHC
No SVHC (25-Jun-2025)
技術文件 (1)
STW56N60M2-4 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.008038