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STW70N60DM2
Power MOSFET, N Channel, 600 V, 66 A, 0.037 ohm, TO-247, Through Hole
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235 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$357.460 |
| 5+ | NT$318.500 |
| 10+ | NT$279.530 |
| 50+ | NT$272.900 |
| 100+ | NT$266.270 |
| 250+ | NT$259.630 |
價格Each
最少: 1
多項: 1
NT$357.46
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STW70N60DM2
訂購代碼2531122
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id66A
Drain Source On State Resistance0.037ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation446W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
- 600V, 66A N-channel MDmesh™ DM2 power MOSFET in 3 pin TO-247 package
- Fast recovery body diode
- Extremely low gate charge and input capacitance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener protected
- Suitable for switching applications
- Very low recovery charge (Qrr) and time (trr) combined with low RDS(on Low on-resistance
- Suitable for the most demanding high efficiency converters
- Ideal for bridge topologies and ZVS phase-shift converters
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
66A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
446W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.037ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.00443