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CSD75301W1015
Dual MOSFET, P Channel, 20 V, 1.2 A
915 有存貨
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915 件可于 3-4 個工作日後配送(英國 件庫存)
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| 數量 | 價格 |
|---|---|
| 1+ | NT$16.440 |
| 10+ | NT$14.260 |
| 100+ | NT$13.000 |
價格Each
最少: 1
多項: 1
NT$16.44
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號CSD75301W1015
訂購代碼1892455
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel1.2A
Drain Source On State Resistance P Channel0.08ohm
Transistor Case StyleDSBGA
No. of Pins6Pins
Power Dissipation N Channel-
Power Dissipation P Channel800mW
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The CSD75301W1015 is a NexFET™ dual P-channel Power MOSFET designed to deliver the lowest ON-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. It is suitable for use with load switch, battery protection and management applications.
- Common source configuration
- Small footprint
- Ultra Low Qg and Qgd
- Halogen-free
應用
Industrial, Power Management
技術規格
Channel Type
P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
1.2A
Transistor Case Style
DSBGA
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance P Channel
0.08ohm
No. of Pins
6Pins
Power Dissipation P Channel
800mW
Product Range
-
MSL
MSL 1 - Unlimited
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0002