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CSD88599Q5DCT
Dual MOSFET, N Channel, 60 V, 60 V, 1700 µohm
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產品訊息
製造商產品編號CSD88599Q5DCT
訂購代碼3009689
Product RangeNexFET Series
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel1700µohm
Drain Source On State Resistance P Channel1700µohm
Transistor Case StyleVSON
No. of Pins22Pins
Power Dissipation N Channel12W
Power Dissipation P Channel12W
Operating Temperature Max150°C
Product RangeNexFET Series
Qualification-
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
1700µohm
No. of Pins
22Pins
Power Dissipation P Channel
12W
Product Range
NexFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
1700µohm
Transistor Case Style
VSON
Power Dissipation N Channel
12W
Operating Temperature Max
150°C
Qualification
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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重量 (公斤)：.0023