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CSD88599Q5DCT
Dual MOSFET, N Channel, 60 V, 60 V, 1700 µohm
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| 製造商 | TEXAS INSTRUMENTS |
|---|---|
| 製造商產品編號 | CSD88599Q5DCT复制 |
| 訂購代碼 | 3009689 |
| Product Range | NexFET Series |
| 您的零件号 |
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產品訊息
| 製造商 | TEXAS INSTRUMENTS |
|---|---|
| 製造商產品編號 | CSD88599Q5DCT复制 |
| 訂購代碼 | 3009689 |
| Product Range | NexFET Series |
| Channel Type | N Channel |
| Drain Source Voltage Vds N Channel | 60V |
| Drain Source Voltage Vds P Channel | 60V |
| Continuous Drain Current Id N Channel | - |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance N Channel | 1700µohm |
| Drain Source On State Resistance P Channel | 1700µohm |
| Transistor Case Style | VSON |
| No. of Pins | 22Pins |
| Power Dissipation N Channel | 12W |
| Power Dissipation P Channel | 12W |
| Operating Temperature Max | 150°C |
| Product Range | NexFET Series |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
技術規格
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds P Channel | 60V |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance P Channel | 1700µohm |
| No. of Pins | 22Pins |
| Power Dissipation P Channel | 12W |
| Product Range | NexFET Series |
| MSL | MSL 1 - Unlimited |
| Drain Source Voltage Vds N Channel | 60V |
|---|---|
| Continuous Drain Current Id N Channel | - |
| Drain Source On State Resistance N Channel | 1700µohm |
| Transistor Case Style | VSON |
| Power Dissipation N Channel | 12W |
| Operating Temperature Max | 150°C |
| Qualification | - |
法規與環境保護
| 原產地： 承擔產品生產最後程序之國家原產地： | United States 承擔產品生產最後程序之國家 |
|---|---|
| 關稅編號： | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| 符合 RoHS 規定： | 是 RoHS |
| 符合 RoHS 鄰苯二甲酸酯類規定: | 是 RoHS |
| 下載產品合規憑證 | 產品合規憑證 |
| 重量 (公斤)： | .0023 |