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TBD62083AFG(Z,EL) is a TBD62083A series BiCD silicon monolithic integrated circuit. It has a clamp diode for switching inductive loads built-in in each output.
- 8 channel sink type DMOS transistor array
- High voltage is 50V (max, Ta = 25°C), high current is 500mA/ch (max, Ta = 25°C)
- Input voltage range from 2.5 to 25V (output on, IOUT = 100mA or upper, VOUT = 2V, Ta = −40 to 85°C)
- COMMON pin voltage is 50V (max, Ta = -40 to 85°C)
- Clamp diode forward current is 400mA (max, Ta = -40 to 85°C)
- Output leakage current is 1.0μA (max, VOUT = 50V, Ta = 85°C, VIN = 0V)
- Turn on delay is 0.4μs (typ, VOUT = 50V, RL = 125ohm, CL = 15pF)
- Turn off delay is 0.8μs (typ, VOUT = 50V, RL = 125ohm, CL = 15pF)
- SOP18-P-375-1.27 package, operating temperature range from -40 to 85°C
附註
Please be careful about thermal conditions during use.
技術規格
Supply Voltage Min
-
No. of Outputs
8Outputs
Output Current
500mA
Product Range
-
Supply Voltage Max
-
Output Voltage
50V
Driver Case Style
SOP
技術文件 (1)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Japan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Japan
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤):.001633