TBD62387AFNG(Z,EL)

TBD62387AFNG(Z,EL) is a TBD62387A series BiCD silicon monolithic integrated circuit. This incorporate clamp diodes for clamping a back-EMF, which generates during inductive-load drive.

• 8-ch low active sink type DMOS transistor array
• High voltage is 50V (max, Ta = 25°C), high current is 500mA/ch (max, Ta = 25°C)
• Input voltage range from 0 to VCC-3.5V (IOUT = -100mA or more, VDS=2V, output on, Ta = -40 to 85°C)
• COMMON pin voltage is 50V (max, Ta = -40 to 85°C)
• Clamp diode forward current is 400mA (max, Ta = -40 to 85°C)
• Consumption current is 60μA (per ch, typ, Ta = 25°C, VCC = 5.5V, VIN = 0V)
• Clamp diode reverse current is 1.0μA (max, VR = 50V, Ta = 85°C)
• Turn on delay is 0.6μs (typ, VCC = 5.0V, VOUT = 50V, RL = 125ohm, CL = 15pF)
• Turn off delay is 0.6μs (typ, VCC = 5.0V, VOUT = 50V, RL = 125ohm, CL = 15pF)
• SSOP20-P-225-0.65A package, operating temperature range from -40 to 85°C

附註

Please be careful about thermal conditions during use.