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2N6845
Power MOSFET, P Channel, 100 V, 4 A, 0.69 ohm, TO-39, Through Hole
不再生產
產品訊息
製造商產品編號2N6845
訂購代碼1208693
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id4A
Drain Source On State Resistance0.69ohm
Transistor Case StyleTO-39
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation20W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The 2N6845 is a P-channel enhancement-mode Power MOSFET offers ±20V gate-source voltage and -4A continuous drain current.
- High voltage
- Hermetically sealed metal package
- Simple drive requirements
- Light weight
- -55 to 150°C Operating temperature range
應用
Power Management, Industrial
技術規格
Channel Type
P Channel
Continuous Drain Current Id
4A
Transistor Case Style
TO-39
Rds(on) Test Voltage
10V
Power Dissipation
20W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.69ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Great Britain
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Great Britain
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：否
符合 RoHS 鄰苯二甲酸酯類規定:否
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000907