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製造商標準交貨時間:28 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$91.340 |
| 10+ | NT$44.740 |
| 100+ | NT$40.220 |
| 500+ | NT$31.840 |
| 1000+ | NT$29.290 |
| 5000+ | NT$28.710 |
價格Each
最少: 1
多項: 1
NT$91.34
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRF520PBF复制
製造商標準前置時間28 週
訂購代碼8648239
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id9.2A
Drain Source On State Resistance0.27ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (04-Feb-2026)
產品總覽
The IRF520PBF is a 100V N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout the industry.
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- ±20V Gate to source voltage
- 2.5°C/W Thermal resistance, junction to case
- 62°C/W Thermal resistance, junction to ambient
應用
Industrial, Commercial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
9.2A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
60W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.27ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
IRF520PBF 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤):.002

