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IRF720PBF
Power MOSFET, N Channel, 400 V, 3 A, 1.8 ohm, TO-220AB, Through Hole
1,103 有存貨
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1,103 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$63.150 |
| 10+ | NT$30.600 |
| 100+ | NT$22.870 |
| 500+ | NT$18.980 |
| 1000+ | NT$16.760 |
| 5000+ | NT$16.620 |
價格Each
最少: 1
多項: 1
NT$63.15
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRF720PBF复制
製造商標準前置時間18 週
訂購代碼8648425
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds400V
Continuous Drain Current Id3A
Drain Source On State Resistance1.8ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation40W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (04-Feb-2026)
產品總覽
The IRF720PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Ease of paralleling
- Simple drive requirements
應用
Industrial, Power Management, Commercial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
3A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
40W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
400V
Drain Source On State Resistance
1.8ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001814