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| 數量 | 價格 |
|---|---|
| 1+ | NT$106.340 |
| 10+ | NT$54.270 |
| 100+ | NT$49.280 |
| 500+ | NT$42.730 |
| 1000+ | NT$42.420 |
| 5000+ | NT$41.580 |
產品訊息
產品總覽
The IRF740LCPBF is a N-channel enhancement-mode Power MOSFET with ultra-low gate charge. This new low charge Power device achieves significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs. This device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFET offers the designer a new standard in power transistors for switching applications.
- Repetitive avalanche rated
- Reduced gate drive requirement
- 30V Enhanced VGS Rating
- Reduced CISS, COSS, CRSS
- Extremely high frequency operation
應用
Industrial, Power Management
技術規格
N Channel
10A
TO-220AB
10V
125W
150°C
-
Lead (04-Feb-2026)
400V
0.55ohm
Through Hole
4V
3Pins
-
-
IRF740LCPBF 的替代選擇
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法規與環境保護
承擔產品生產最後程序之國家原產地:Israel
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證

