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IRF830APBF
Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole
3,156 有存貨
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3,156 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$73.180 |
| 10+ | NT$46.430 |
| 100+ | NT$32.560 |
| 500+ | NT$28.050 |
| 1000+ | NT$27.490 |
| 5000+ | NT$26.930 |
價格Each
最少: 1
多項: 1
NT$73.18
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRF830APBF复制
製造商標準前置時間18 週
訂購代碼8648522
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id5A
Drain Source On State Resistance1.4ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation74W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (04-Feb-2026)
產品總覽
The IRF830APBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 150°C Operating temperature
- Easy to parallel
- Simple drive requirement
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
5A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
74W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
1.4ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002