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IRF9630PBF
Power MOSFET, P Channel, 200 V, 6.5 A, 0.8 ohm, TO-220AB, Through Hole
3,339 有存貨
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293 件可于 1-2 個工作日後配送(新加坡 件庫存)
3046 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$63.730 |
| 10+ | NT$32.510 |
| 100+ | NT$32.290 |
| 500+ | NT$32.070 |
| 1000+ | NT$31.840 |
| 5000+ | NT$29.140 |
價格Each
最少: 1
多項: 1
NT$63.73
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
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產品訊息
製造商VISHAY
製造商產品編號IRF9630PBF
訂購代碼1653665
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id6.5A
Drain Source On State Resistance0.8ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation74W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
產品總覽
The IRF9630PBF is a -200V single P-channel HEXFET® Power MOSFET, third generation HEXFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Easy to parallel
- Simple drive requirements
應用
Power Management, Power Management
技術規格
Channel Type
P Channel
Continuous Drain Current Id
6.5A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
74W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.8ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
IRF9630PBF 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000907