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IRF9Z30PBF
Power MOSFET, HEXFET, P Channel, 50 V, 18 A, 0.14 ohm, TO-220AB, Through Hole
381 有存貨
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381 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$104.130 |
| 10+ | NT$60.150 |
| 100+ | NT$39.130 |
| 500+ | NT$37.520 |
| 1000+ | NT$35.900 |
| 5000+ | NT$35.190 |
價格Each
最少: 1
多項: 1
NT$104.13
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRF9Z30PBF复制
製造商標準前置時間42 週
訂購代碼2547298
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id18A
Drain Source On State Resistance0.14ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation74W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (04-Feb-2026)
產品總覽
The IRF9Z30PBF is a P-channel enhancement-mode Power MOSFET designed for application which require the convenience of reverse polarity operation. This device design achieve very low ON-state resistance combined with high trans-conductance and extreme device ruggedness. It is intended for use in power stages where complementary symmetry with n-channel devices offer circuit simplification. It is also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection.
- Fast switching
- Compact plastic package
- Low drive current
- Ease of paralleling
- Excellent temperature stability
應用
Industrial, Power Management
技術規格
Channel Type
P Channel
Continuous Drain Current Id
18A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
74W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
50V
Drain Source On State Resistance
0.14ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
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重量 (公斤)：.002