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IRFB20N50KPBF..
Power MOSFET, N Channel, 500 V, 20 A, 0.21 ohm, TO-220AB, Through Hole
不再生產
產品訊息
製造商VISHAY
製造商產品編號IRFB20N50KPBF..复制
訂購代碼2295732
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id20A
Drain Source On State Resistance0.21ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation280W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (19-Jan-2021)
IRFB20N50KPBF.. 的替代選擇
找到 2 個產品
產品總覽
The IRFB20N50KPBF is a N-channel enhancement-mode Power MOSFET with low gate charge.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Simple drive requirements
- Low RDS (ON)
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
280W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (19-Jan-2021)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.21ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (19-Jan-2021)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002718