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IRFD014PBF
Power MOSFET, N Channel, 60 V, 1.7 A, 0.2 ohm, DIP, Through Hole
不再生產
產品訊息
製造商VISHAY
製造商產品編號IRFD014PBF复制
訂購代碼9102337
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.7A
Drain Source On State Resistance0.2ohm
Transistor Case StyleDIP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation1.3W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
產品總覽
The IRFD014PBF is a 60V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 175°C Operating temperature
- Easy to parallel
- Simple drive requirement
- For automatic insertion
- End stackable
應用
Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
1.7A
Transistor Case Style
DIP
Rds(on) Test Voltage
10V
Power Dissipation
1.3W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
4Pins
Product Range
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000544