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105 有存貨
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105 件可于 1-2 個工作日後配送(新加坡 件庫存)
存貨供應完畢便停止銷售
| 數量 | 價格 |
|---|---|
| 1+ | NT$34.020 |
| 10+ | NT$24.520 |
| 100+ | NT$19.380 |
| 500+ | NT$12.760 |
| 1000+ | NT$11.280 |
| 5000+ | NT$10.550 |
價格Each
最少: 1
多項: 1
NT$34.02
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品總覽
The IRFD220PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
- Dynamic dV/dt rating
- For automatic insertion
- End stackable
- Repetitive avalanche rated
- Ease of paralleling
- Simple drive requirements
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Transistor Mounting
Through Hole
Qualification
-
Transistor Case Style
DIP
Product Range
-
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤):.000574

